Caratteristiche Configurazione flessibile per trovare il punto di funzionamento ottimale per la vostra applicazione Campo di misura, risoluzione, tempo di integrazione e consumo di corrente regolabili Interfaccia dati LVDS ad alta velocità Riferimento di tensione e sensore di temperatura integrati Vantaggi Rumore molto basso, fino a 3200 elettroni a fondo scala fino a 1µA Tempo […]
CaracterÃsticas Configuración flexible para obtener el punto de funcionamiento optimizado en su aplicación Rango de escala completa, resolución, tiempo de integración y consumo de energÃa ajustables Interfaz de datos LVDS de alta velocidad Referencia de tensión y sensor de temperatura integrados Ventajas Ruido ultrabajo de hasta 3200 electrones para un rango de escala completa de
Merkmale Flexible Konfiguration, um den optimalen Betriebspunkt für Ihre Anwendung zu finden Einstellbarer Messbereich, Auflösung, Integrationszeit und Stromverbrauch Hochgeschwindigkeits-LVDS-Datenschnittstelle Integrierte Spannungsreferenz und Temperatursensor Vorteile Sehr geringes Rauschen von bis zu 3200 Elektronen bei einem Skalenendwert von bis zu 1µA Sehr schnelle Integrationszeit von bis zu 50µs Hohe Linearität von ±250ppm des Messwerts ±1ppm des FSR
Features Flexible configuration to get the optimized operation point in your application Adjustable full scale range, resolution, integration time and power consumption High speed LVDS data interface On board voltage reference and temperature sensor Benefits Ultra-low noise down to 3200 electrons for a full-scale range up to 1µA Very fast integration time down to 50µs
Features Line times down to 80 µs Binning mode (half the number of effective channels) for faster readout speed down to 40 µs Selectable parameters: input charge range, holes or electrons polarity, detector timing, low-pass filter time constant and line time Up to three different internal charge pump cycles for offset adjusting, signal emulation and
Merkmale Zeilenzeiten bis zu 80 µs Binning-Modus (halbe Anzahl effektiver Kanäle) für eine schnellere Auslesegeschwindigkeit von bis zu 40 µs Wählbare Parameter: Eingangsladungsbereich, Löcher- oder Elektronenpolarität, Detektor-Timing, Tiefpassfilter-Zeitkonstante und Linienzeit Bis zu drei verschiedene interne Ladungspumpenzyklen für Offset-Abgleich, Signalemulation und Kompensation der Schalterladungsinjektion Sleep- und vollständiger Power-down-Modus Korrelierte Doppelabtastung zur Offset-Subtraktion mit programmierbarer Zeitkonstante Vorteile
CaracterÃsticas Tiempos de lÃnea de hasta 80 µs Modo Binning (la mitad del número de canales efectivos) para una mayor velocidad de lectura de hasta 40 µs Parámetros seleccionables: rango de carga de entrada, polaridad de agujeros o electrones, temporización del detector, constante de tiempo del filtro de paso bajo y tiempo de lÃnea Hasta
Caratteristiche Tempi di linea fino a 80 µs Modalità binning (dimezzamento del numero di canali effettivi) per una maggiore velocità di lettura fino a 40 µs Parametri selezionabili: Intervallo di carica in ingresso, polarità delle buche o degli elettroni, temporizzazione del rivelatore, costante di tempo del filtro passa-basso e tempo di linea Fino a tre
CaracterÃsticas Tiempos de lÃnea de hasta 40 µs Modo Binning (la mitad del número de canales efectivos) para una mayor velocidad de lectura de hasta 20 µs Parámetros seleccionables: rango de carga de entrada, polaridad de agujeros o electrones, temporización del detector, constante de tiempo del filtro de paso bajo y tiempo de lÃnea Hasta
Merkmale Zeilenzeiten bis zu 40 µs Binning-Modus (halbe Anzahl effektiver Kanäle) für eine schnellere Auslesegeschwindigkeit von bis zu 20 µs Wählbare Parameter: Eingangsladungsbereich, Löcher- oder Elektronenpolarität, Detektor-Timing, Tiefpassfilter-Zeitkonstante und Linienzeit Bis zu drei verschiedene interne Ladungspumpenzyklen für Offset-Abgleich, Signalemulation und Kompensation der Schalterladungsinjektion Zwei Stromversorgungsmodi zusätzlich zu den Modi Sleep und Full Power Down Korrelierte
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